Product Description:
Santec's new system TMS-2000 brings a new dynamic to high-precision subnanometer mapping of semiconductor wafer thickness. The TMS-2000 employs a novel laser scanning method (not previously used in the industry for wafer mapping) that brings several advantages to the industry; With accurate thickness measurements that are insensitive to temperature changes, a single system can measure not only Si monolayers but also power semiconductors such as SiC and GaN and multilayer wafers such as SOI at a cost point that is attractive for widespread deployment in production. As the size of semiconductor devices decreases, the tolerances of lithography processes become finer, increasing the importance of high accuracy in wafer thickness and field flatness measurements. For non-contact, the industry has been relying on heterodyne interference or Fizau fringe analysis systems for subnanometer accuracy measurements, but these systems have some drawbacks in terms of general adoption. These current solutions require front and back wafer lighting, are sensitive to temperature changes and vibration, and are complex and costly. Santec TMS-2000 addresses all the issues found in current solutions.
Product Features:
Accurate measurements are not sensitive to temperature changes and vibrations
Sub-nanometer thickness repeatability
Complete wafer mapping with customizable scan patterns
Single side lighting
Wafer to wafer comparison
Suitable for heavily doped silicon as well as power semiconductors and multilayer wafers
The measurement conforms to SEMI standard
Cost advantages over traditional solutions