Product Description:
AMAT/APPLIED MATERIALS Centura TPCC is a vertical heat treatment device capable of deposting thin film materials on a variety of substrates. The equipment uses rapid heat treatment technology to provide good thermal uniformity for deposition of high-quality coated films. AMAT Centura TPCC is suitable for CVD, ALD, plasma enhanced deposition and other deposition process materials such as silicon oxide, silicon oxide, silicon nitride, titanium nitride and other advanced materials. The deposited material has the ability to form multiple device structures, including MOSFETs, capacitors, SOI, and MEMS structures. Application Material Centura TPCC utilizes precise temperature and heating control to achieve precise film deposition with excellent uniformity, repeatability and repeatability across substrates. Its advanced thermal control ensures an effective temperature distribution throughout the substrate surface and also improves the uniformity of the entire process. The Centura TPCC features an advanced wafer lift system that uses a three-stage motion control system to enable precise motion along the vertical axis of the chamber while reducing wafer motion. AMAT/APPLIED MATERIALS Centura TPCC offers a wide range of process formulations and can be programmed to suit specific process requirements. It is also equipped with a set of advanced automation tools such as advanced control algorithms, process flow control and process formulation automation, allowing for automated and integrated processing. AMAT Centura TPCC is designed for rapid heat treatment and is capable of producing thin-film materials with high throughput with excellent repeatability, precision, precision and temperature uniformity. It provides a highly reliable process capable of handling high volume substrate throughput with minimal operation assistance and reduced maintenance costs. The APPLIED MATERIALS Centura TPCC provides flexibility for custom process formulations and is an excellent choice for rapid thermal deposition processes.
