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求购其他品牌 CENTURA 5200 WXZ 等离子体加工设备和工具

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产品参数

选件 保修时间 状态 是否计量
不保修 完好 否
成色 发货周期 所在地 数量
二手 -- 深圳市 1
预算价格: 电议
更新日期:2025-01-04
联系电话:0755-86016691

*产品描述

产品描述:

AMAT/APPLIED MATERIALS Centura 5200 WxZ是一种高性能晶片蚀刻反应器,旨在为多种基材提供精确的控制和精度。这座独特的反应堆配备了先进的离子源技术,允许在各种特性上实现高达300 mm的蚀刻速率,具有± 8 µm的卓越轮廓可重复性。该系统采用直径6英寸的大腔室和温度控制选项优化用于小型晶片加工,以保持工艺稳定性和质量一致的晶片。Centura 5200先进的离子源技术是专为优化目标蚀刻深度和特征可重复性而设计的。离子源完全加速电离气体,通常是氧气或氯气,以提供卓越的蚀刻均匀性和对工艺参数的精确控制。这样可以确保可重复蚀刻速率,并最大程度地减少对基板的损坏。Centura 5200还提供了一个可选的端点检测包,其中激光能量束发射到腔室中,让操作员获得精确的蚀刻速率和深度读数。该测量显示在反应堆的主控制屏幕上,允许实时过程调整和严格控制。AMAT Centura 5200 WxZ的其他特性包括晶圆旋转能力,允许最多三轴旋转,同时实现出色的均匀性。这有助于在任何表面保持完美的蚀刻质量,以及产生更大的基板稳定性。此外,多气体输送系统能够对气体组成和流量进行精确控制,从而实现优化基板加工。总之,APPLIED MATERIALS Centura 5200 WxZ是一种先进的晶片蚀刻反应器系统,具有先进的离子源技术,可实现最佳蚀刻速率控制和特征重复性。该反应堆具有多种特点,为小型晶片加工提供精确的控制和卓越的质量。此外,它还提供可靠的端点检测和多气体输送选项,以确保过程的稳定性和均匀性。

其他要求

Product Description:
 
The AMAT/APPLIED MATERIALS Centura 5200 WxZ is a high-performance wafer etching reactor designed to provide precise control and precision for a wide range of substrates. This unique reactor is equipped with advanced ion source technology that allows etching rates of up to 300 mm across a variety of characteristics, with excellent profile repeatability of ± 8 µm. The system is optimized for small chip processing with a large 6-inch diameter chamber and temperature control options to maintain process stability and consistent chip quality. The Centura 5200 advanced ion source technology is designed to optimize target etching depth and feature repeatability. The ion source fully accelerates ionized gas, usually oxygen or chlorine, to provide excellent etching uniformity and precise control of process parameters. This ensures repeatable etching rates and minimizes damage to the substrate. The Centura 5200 also offers an optional endpoint detection package in which a laser energy beam is fired into the chamber, allowing the operator to obtain accurate etching rate and depth readings. This measurement is displayed on the reactor's main control screen, allowing for real-time process adjustment and tight control. Other features of the AMAT Centura 5200 WxZ include a wafer rotation capability that allows for up to three axes of rotation while achieving excellent uniformity. This helps maintain perfect etching quality on any surface, as well as producing greater substrate stability. In addition, the multi-gas delivery system enables precise control of gas composition and flow rate for optimized substrate processing. In summary, the APPLIED MATERIALS Centura 5200 WxZ is an advanced wafer etching reactor system with advanced ion source technology for optimal etching rate control and feature repeatability. The reactor has a variety of features that provide precise control and superior quality for small wafer processing. In addition, it offers reliable endpoint detection and multi-gas delivery options to ensure process stability and uniformity.

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